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An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:14
,
Issue:
5
)
Date of Publication: May 2004
- Page(s):
- 204 - 206
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 7959056
- Digital Object Identifier :
- 10.1109/LMWC.2004.827911
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 10 May 2004
- Issue Date :
- May 2004
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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