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New power MOSFET selection method to avoid failures

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6 Author(s)
Jordan, J. ; Dept. d''Enginyeria Electron., Valencia Univ., Spain ; Esteve, V. ; Garcia-Gil, R. ; Sanchis, E.
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Power MOSFET are the primary cause of failure at high power inverters. The turning on of the parasitic bipolar transistor during hard turn off of the intrinsic body diode causes the failures. We propose to test MOSFET from different manufacturers under controlled laboratory conditions. The worst switching condition and the most robust MOSFET was then identified.

Published in:

Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE  (Volume:2 )

Date of Conference:

2004