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A novel gate-coupled SCR ESD protection structure with high latchup immunity for high-speed I/O pad

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5 Author(s)
Chun-Hsiang Lai ; Device Eng. Dept., Macronix Int. Co., Hsinchu, Taiwan ; Meng-Hwang Liu ; Shin Su ; Tao-Cheng Lu
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A novel electrostatic discharge (ESD) protection device, namely, a highly latchup-immune gate-coupled p-type low-voltage-trigger silicon-controlled rectifier, has been demonstrated to be an effective ESD protection device with low capacitive-loading effect. With the proper control circuit, a trigger voltage higher than 10 V and a trigger current larger than 90 mA can be achieved, while the holding voltage is still higher than 3 V under normal operation, which provides excellent latchup immunity. In the event of an ESD, this novel silicon-controlled rectifier device could trigger quickly and provide an effective discharging path.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 5 )