By Topic

A large-signal GaAs MESFET model for nonlinear circuit simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Imam, M. ; Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA ; Osman, M.A. ; Prieto, Y.

A GaAs MESFET large-signal model suitable for use in time-domain circuit simulation CAD tools such as PSPICE has been developed. The improved model includes accurate analytic representation of the transconductance and conductance dependence upon the operating voltages. The new model gives better fit to GaAs MESFET I-V characteristics over a wider bias voltage range compared with the Curtice quadratic model. It also provides a simpler and more efficient parameter acquisition procedure in comparison to the TriQuint model. The procedure for extracting the model parameters using the bias dependence of the small-signal elements is also described.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:2 ,  Issue: 4 )