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High field effect mobility in Si face 4H-SiC MOSFET transistors

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7 Author(s)
H. O. Olafsson ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden ; G. Gudjonsson ; P. -A. Nilsson ; E. O. Sveinbjornsson
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A report is made on field effect mobility of 150 cm2/Vs in lateral n-channel Si face 4H-SiC MOSFETs made by gate oxidation in N2O ambient. The high mobility is correlated with a two orders of magnitude reduction in density of interface states near the SiC conduction band edge when compared to gate oxides made in a wet or dry oxygen ambient.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 8 )