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A low-noise low-offset capacitive sensing amplifier for a 50-μg/√Hz monolithic CMOS MEMS accelerometer

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3 Author(s)
Jiangfeng Wu ; Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA ; Fedder, G.K. ; Carley, L.R.

This paper describes a CMOS capacitive sensing amplifier for a monolithic MEMS accelerometer fabricated by post-CMOS surface micromachining. This chopper stabilized amplifier employs capacitance matching with optimal transistor sizing to minimize sensor noise floor. Offsets due to sensor and circuit are reduced by ac offset calibration and dc offset cancellation based on a differential difference amplifier (DDA). Low-duty-cycle periodic reset is used to establish robust dc bias at the sensing electrodes with low noise. This work shows that continuous-time voltage sensing can achieve lower noise than switched-capacitor charge integration for sensing ultra-small capacitance changes. A prototype accelerometer integrated with this circuit achieves 50-μg/√Hz acceleration noise floor and 0.02-aF/√Hz capacitance noise floor while chopped at 1 MHz.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 5 )