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Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.