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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

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7 Author(s)
M. Garcia ; Thales Res. & Technol. France, Orsay, France ; A. Salhi ; A. Perona ; Y. Rouillard
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Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.

Published in:

IEEE Photonics Technology Letters  (Volume:16 ,  Issue: 5 )