Referenced Items are not available for this document.
A flip-chip mounted W-band amplifier module with more than 15 dB gain between 82 and 105 GHz has been developed, based on a 0.15 μm GaAs PHEMT technology. To predict the influence of the flip-chip transition, an equivalent circuit model of the flip-chip interconnects was developed. Lossy silicon (n-Si) flip-chip carriers were used to successfully minimize parasitic substrate modes and feed back effects. The flip-chip assembled coplanar 94 GHz amplifier MMIC was packaged in a WR-10 waveguide mount, using CPW-to-waveguide transitions realized on quartz substrates.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:14
,
Issue:
4
)
Date of Publication: April 2004
- Page(s):
- 145 - 147
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 7967497
- Digital Object Identifier :
- 10.1109/LMWC.2004.827115
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 04 May 2004
- Issue Date :
- April 2004
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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