By Topic

A flip-chip packaged coplanar 94 GHz amplifier module with efficient suppression of parasitic substrate effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tessmann, A. ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; Riessle, M. ; Kudszus, S. ; Massler, H.

A flip-chip mounted W-band amplifier module with more than 15 dB gain between 82 and 105 GHz has been developed, based on a 0.15 μm GaAs PHEMT technology. To predict the influence of the flip-chip transition, an equivalent circuit model of the flip-chip interconnects was developed. Lossy silicon (n-Si) flip-chip carriers were used to successfully minimize parasitic substrate modes and feed back effects. The flip-chip assembled coplanar 94 GHz amplifier MMIC was packaged in a WR-10 waveguide mount, using CPW-to-waveguide transitions realized on quartz substrates.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:14 ,  Issue: 4 )