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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement

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3 Author(s)
J. R. Waldrop ; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA ; K. C. Wang ; P. M. Asbeck

A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 5 )