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Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps

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3 Author(s)
Look, D.C. ; Univ. Res. Center, Wright State Univ., Dayton, OH, USA ; Yamamoto, H. ; Nakano, K.

Molecular-beam epitaxial GaAs layers, grown at 200 or 400°C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n≃1.6×1017 cm-3) grown at normal temperatures (580-600°C). It is shown that ohmic contacts, with specific contact resistances of 10-6 Ω-cm2, can easily be fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p=1.5×1017 cm-3) suggest that a 200°C cap may degrade the contact resistance by a factor of 3-10

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 5 )

Date of Publication:

May 1992

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