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Theory of junction between two-dimensional electron gas and p-type semiconductor

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3 Author(s)
Gelmont, B. ; Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA ; Shur, M. ; Moglesture, C.

The authors develop a theory of the junction between a two-dimensional electron gas and a three-dimensional p-type semiconductor contact. The cut-in voltage of such a junction depends on the density of the 2-D electron gas. Hence, at low currents, the device current varies exponentially with the 2-D gas density. The unique features of such junctions include a very small effective cross section (equal to the product of the thickness of the 2-D gas and the device width) and, hence, a small junction capacitance and a small device current at large current densities. Using a conformal mapping technique, the authors calculate potential and field distributions and find the differential device capacitance as a function of bias. They then calculate the output device characteristics for different gate voltages. The results of a 2-D self-consistent Monte Carlo simulation for such a structure are presented. This simulation clearly shows that electrons and holes are localized in the vicinity of the 2-D electron gas even at high drain biases

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 5 )