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Elastomer-supported cold welding for room temperature wafer-level bonding

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3 Author(s)
W. Y. Zhang ; Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA ; G. S. Ferguson ; S. Tatic-Lucic

This paper presents a method for room-temperature wafer-level bonding that is applicable for the MEMS and NEMS packaging and fabrication processes, but does not require an applied voltage, high pressure or vacuum. By applying a layer of elastomer between the wafer and gold overlayer, we successfully bonded two silicon wafers under limited load (∼3 KPa) at room temperature (25°C). One of the important potential applications of this technique is to create a temporary cap wafer that would protect already released, bulk or surface-micromachined structures during the dicing process. The initial results of experiments on the detachment of the temporary cap wafers bonded using this method are presented.

Published in:

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

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