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This paper reports horizontal buried channels in monocristalline silicon. Those channels are a few microns in width and height and several hundred microns long. The main applications for those buried channels are microfluidic networks for MEMS devices and cooling systems for integrated circuits. Their fabrication is based on integrated circuit standard processes such as selective monocristalline epitaxial growth and high temperature annealing. The major interest of the method is its compatibility with integrated circuit manufacturing technology.