By Topic

Thermal oxidation-induced strain in silicon nanobeams

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pyzyna, A.M. ; Dept. of Mater., California Univ., Santa Barbara, CA, USA ; Clarke, D.R. ; MacDonald, N.C.

Single crystal silicon beams of sub-micron thickness were fabricated from the device layer of SIMOX type silicon-on-insulator wafers. The beams were thermally oxidized at 950°C in dry oxygen and the oxide was subsequently removed. As a result of the oxidation, there is a small but measurable accumulation of strain, which increases with the reduction of the beams' thickness. The cause of this strain is not presently known, but A model is proposed based on the injection of self-interstitial silicon atoms from the oxidation front.

Published in:

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Date of Conference:

2004