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Annealing temperature dependent strength of polysilicon measured using a novel tensile test structure

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5 Author(s)
Kamiya, S. ; Inst. for Microsyst. Technol., Freiburg Univ., Germany ; Kuypers, J. ; Trautmann, A. ; Ruther, P.
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Polysilicon is commonly used as a structural material of MEMS after being deposited at a temperature below 600°C and annealed at a temperature around 1000°C to remove the residual stress. On the other hand, polysilicon can be also deposited at a temperature higher than 600°C. We have examined the strength of polysilicon films obtained with different processing temperatures using a new efficient tensile test structure with plural specimens bridging the gap of a silicon substrate. Films deposited at 560°C had the highest strength when annealed at 850°C. Films deposited at 625°C and annealed at 1050°C were weaker than those deposited at 560°C and annealed at 1050°C.

Published in:

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Date of Conference:

2004