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Low-temperature deposition of hafnium silicate gate dielectrics

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8 Author(s)
Punchaipetch, P. ; Nara Inst. of Sci. & Technol., Japan ; Pant, G. ; Quevedo-Lopez, M.A. ; Yao, C.
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The physical and electrical properties of hafnium silicate (HfSixOy) films produced by low-temperature processing conditions (≤150°C) suitable for flexible display applications were studied using sputter deposition and ultra-violet generated ozone treatments. Films with no detectable low-κ interfacial layer were produced. Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy were used to determine the composition, chemical bonding environment, thickness, and film interface. The electrical behavior of the as-deposited and annealed hafnium silicate films were determined by current-voltage (I--V) and capacitance-voltage (C--V) measurements.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:10 ,  Issue: 1 )