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SU8 resist plasma etching and its optimisation

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3 Author(s)
Guodong Hong ; Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK ; Holmes, A.S. ; Heaton, M.E.

The thick photoresist SU8, by virtue of its good mechanical durability, water impermeability and dielectric properties on polymerisation, is widely used as a resin for making high aspect ratio, functional MEMS device structures and packaging parts. However, the difficulty associated with removal, stripping or repatterning of the polymerised SU8 remains a serious issue. This paper presents a novel process, based on O2/SF6 plasma etching, for patterning or removal of fully cross-linked SU8. The Taguchi methodology is used to optimise the O2/SF6 mix for a high etch rate and low under cut.

Published in:

Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Symposium on

Date of Conference:

5-7 May 2003

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