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Simulation study of irradiated Si sensors equipped with metal-overhang for applications in LHC environment

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9 Author(s)
Chatterji, S. ; Centre for Detector & Related Software Technol., Univ. of Delhi, India ; Ranjan, K. ; Bhardwaj, A. ; Namrata
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The performance of metal-overhang (MO) equipped silicon micro-strip sensors, after irradiation for the preshower detector to be used in compact muon solenoid (CMS)experiment at the large hadron collider (LHC), CERN, has been studied through simulations. Detailed calculations using Hamburg model have allowed the parameterization of these effects and helped to simulate the operation scenario of MO equipped sensors over ten years of LHC operation. The utility of overhanging metal extension as junction termination technique after space charge sign inversion (SCSI) has been explored in detail for the first time in this work. Several interesting results like a shift in the optimal oxide thickness in MO equipped structures after irradiation have been reported. The comparison of dielectric and semi-insulator passivated MO equipped structures after irradiation has been studied. Also, the impact of various crucial geometrical parameters like device depth (WN), width of back N+ layer used for ohmic contact (WN+), strip width (W), strip pitch (P) and width of overhang extension (WMO) on the MO equipped structure after SCSI has been presented in detail.

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Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 2 )