By Topic

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Xinwen Hu ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; Choi, B.K. ; Barnaby, H.J. ; Fleetwood, D.M.
more authors

The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 1013 cm-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 1012 cm-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 2 )