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The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

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10 Author(s)
Xinwen Hu ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; B. K. Choi ; H. J. Barnaby ; D. M. Fleetwood
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The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 1013 cm-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 1012 cm-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.

Published in:

IEEE Transactions on Nuclear Science  (Volume:51 ,  Issue: 2 )