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Effects of interface trap generation and annihilation on the data retention characteristics of flash memory cells

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4 Author(s)
Jae-Duk Lee ; R&D Center, Samsung Electron. Co., Gyunggi-Do, South Korea ; Jeong-Hyuk Choi ; Donggun Park ; Kinam Kim

It is revealed that the interface trap generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow-trench isolation (STI)-isolated NAND flash cells shrinks. Furthermore, we argue that the interface trap annihilation phenomenon during retention mode becomes a major failure mechanism of the data retention characteristics of sub-100-nm cells in addition to the conventional charge loss mechanism. A new interface trap analysis method using the hysteresis of the Id--Vg curve is proposed and shows that the interface traps consist of fast traps and slow traps.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:4 ,  Issue: 1 )

Date of Publication:

March 2004

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