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CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown

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3 Author(s)
Enjun Xiao ; Dept. of Electr. Eng., Univ. of Texas, Arlington, TX, USA ; J. S. Yuan ; Hong Yang

Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:4 ,  Issue: 1 )