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Minority-carrier exclusion model for circular Spreading-Resistance Temperature sensor based on ultra-thin Silicon on insulator

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5 Author(s)
Wu, Z.H. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ., China ; Lai, P.T. ; Bin Li ; Liu, B.Y.
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A two-dimensional model is developed to explain the minority-carrier exclusion effect in circular Spreading-Resistance Temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

Published in:

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Date of Conference:

16-18 Dec. 2003