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Single-event effects test results of 512MB SDRAMs

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3 Author(s)
Langley, T. ; SEAKR Eng. Inc., Centennial, CO, USA ; Koga, R. ; Morris, T.

Single-event effect test results of new 512MB SDRAMs are reported in this paper. Effects characterized during testing include single-event upset, single-event latchup, and single-event functional interrupt. Upset cross-sections are compared with radiation test results of earlier generation SDRAMs as a feasibility assessment for use of these new technologies.

Published in:

Radiation Effects Data Workshop, 2003. IEEE

Date of Conference:

21-25 July 2003

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