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TID, SEE and radiation induced failures in advanced flash memories

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2 Author(s)
Nguyen, D.N. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Scheick, L.Z.

We report on TID and SEE tests of multi-level and higher density flash memories. Standby currents and functionality tests were used to characterize the response of radiation induced failures. The radiation-induced failures can be categorized as following: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

Published in:

Radiation Effects Data Workshop, 2003. IEEE

Date of Conference:

21-25 July 2003