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An active pixel sensor (APS) based on high gain CMOS compatible lateral bipolar transistor (LBT) on SOS substrate with backside illumination

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4 Author(s)
Chen Xu ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Chao Shen ; Ko, P.K. ; Chan, M.

In this paper, an innovative Active Pixel Sensor based on high gain CMOS compatible Lateral Bipolar Transistor (LBT) on Silicon-on-Sapphire (SOS) substrate has been introduced. A number of unique features are presented in the new design to overcome the difficulties to fabricate high performance APS in SOI related technology, including: (1) PMOSFET reset transistor to increase pixel voltage swing without area penalty; (2) a LBT as charge sensing element to increase responsivity; and (3) backside illumination through the transparent sapphire substrate to improve optical transmission. The APS has been implemented in a Peregrine's 0.5 μm SOS CMOS process and verified to work at a low power supply voltage of 1.2 V.

Published in:

Sensors, 2003. Proceedings of IEEE  (Volume:2 )

Date of Conference:

22-24 Oct. 2003

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