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A new sensor structure, based on a sensing layer formed by a mixed conduction ceramic of BaSnO3 playing the role of an active element in a device structure, is proposed for oxygen detection in harsh ambient. I-V curves at different operating temperatures and at different gas atmospheres have been measured. Variation of more than 1 Volt is obtained for a current source of about 60 mA. The device shows a significant sensitivity to oxygen, with a maximum response at 400°C. Sensing mechanisms are discussed and a model describing the behaviour of the structure is proposed. It takes into account the different types of conduction of the BaSnO3 as the temperature is modified.