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Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond

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3 Author(s)
M. Stutzmann ; Walter Schottky Inst., Garching, Germany ; J. A. Garrido ; M. Eickhoff

The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

Published in:

Sensors, 2003. Proceedings of IEEE  (Volume:2 )

Date of Conference:

22-24 Oct. 2003