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Comparison of GaInNAs laser diodes based on two to five quantum wells

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3 Author(s)
Gollub, D. ; Nanosystems & Technol., Nanoplus GmbH, Gerbrunn, Germany ; Moses, S. ; Forchel, A.

We have investigated GaInNAs-GaAsN multiquantum-well (MQW) lasers with two-QW (DQW), three-QW (TQW), and five-QW (5QW) active regions and emission in the 1.3-μm range. A solid-source molecular beam epitaxy system has been used to grow the structures. Operation of a GaInNAs 5QW laser is reported. Low threshold currents of 22 (DQW) to 52 mA (5QWs) and external efficiencies of 0.25 W/A (DQWs) to 0.16 W/A (5QWs) per facet are realized under CW operation. T0-values of 121 K are obtained.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:40 ,  Issue: 4 )

Date of Publication:

April 2004

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