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A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process

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18 Author(s)
McAdams, H.P. ; Texas Instrum. Inc., Dallas, TX, USA ; Acklin, R. ; Blake, T. ; Xiao-Hong Du
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A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process. Only two additional masks are required for integration of the ferroelectric module into a single-gate-oxide low-voltage logic process. Novel overwrite sense amplifier and programmable ferroelectric reference generation schemes are employed for fast reliable read-write cycle operation. Address access time for the memory is less than 30 ns while consuming less than 0.8 mW/MHz at 1.37 V. An embedded FRAM (eFRAM) density of 1.13 Mb/mm2 is achieved with a cell size of 0.54 μm2 and capacitor size of 0.25 μm2.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 4 )