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A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process. Only two additional masks are required for integration of the ferroelectric module into a single-gate-oxide low-voltage logic process. Novel overwrite sense amplifier and programmable ferroelectric reference generation schemes are employed for fast reliable read-write cycle operation. Address access time for the memory is less than 30 ns while consuming less than 0.8 mW/MHz at 1.37 V. An embedded FRAM (eFRAM) density of 1.13 Mb/mm2 is achieved with a cell size of 0.54 μm2 and capacitor size of 0.25 μm2.