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High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates

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4 Author(s)
Kim, Y.M. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Griffith, Z. ; Rodwell, M.J.W. ; Gossard, A.C.

InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on GaAs substrates. A 284-GHz power-gain cutoff frequency fmax and a 216-GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was >5 V while the dc current gain β was 21. High thermal conductivity InP metamorphic buffer layers were employed in order to minimize the device thermal resistance.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 4 )