Cart (Loading....) | Create Account
Close category search window
 

High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Minko, A. ; GaN Electron. Res. Group, Univ. Lille, Villeneuve d''Ascq, France ; Hoel, V. ; Lepilliet, S. ; Dambrine, G.
more authors

AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-μm T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at VGS=1 V and VDS=10 V with an intrinsic transconductance (gm) of 215 mS/mm. A unity current gain cutoff frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 92 GHz are measured at VDS=10 V and IDS=171 mA/mm. The radio-frequency microwave noise performance of the device is obtained at 10 GHz for different drain currents. At VDS=10 V and IDS=92 mA/mm, the device exhibits a minimum-noise figure (NFmin) of 1.1 dB and an associated gain (Gass) of 12 dB. To our knowledge, these results are the best ft, fmax and microwave noise performance ever reported on GaN HEMT grown on Silicon substrate.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 4 )

Date of Publication:

April 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.