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High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

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9 Author(s)
Minko, A. ; GaN Electron. Res. Group, Univ. Lille, Villeneuve d'Ascq, France ; Hoel, V. ; Lepilliet, S. ; Dambrine, G.
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AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-μm T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10 V with an intrinsic transconductance (g/sub m/) of 215 mS/mm. A unity current gain cutoff frequency (fT) of 46 GHz and a maximum oscillation frequency (fmax) of 92 GHz are measured at V/sub DS/=10 V and I/sub DS/=171 mA/mm. The radio-frequency microwave noise performance of the device is obtained at 10 GHz for different drain currents. At V/sub DS/=10 V and I/sub DS/=92 mA/mm, the device exhibits a minimum-noise figure (NFmin) of 1.1 dB and an associated gain (G/sub ass/) of 12 dB. To our knowledge, these results are the best fT, fmax and microwave noise performance ever reported on GaN HEMT grown on Silicon substrate.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 4 )