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High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

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9 Author(s)
Minko, A. ; GaN Electron. Res. Group, Univ. Lille, Villeneuve d''Ascq, France ; Hoel, V. ; Lepilliet, S. ; Dambrine, G.
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AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-μm T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at VGS=1 V and VDS=10 V with an intrinsic transconductance (gm) of 215 mS/mm. A unity current gain cutoff frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 92 GHz are measured at VDS=10 V and IDS=171 mA/mm. The radio-frequency microwave noise performance of the device is obtained at 10 GHz for different drain currents. At VDS=10 V and IDS=92 mA/mm, the device exhibits a minimum-noise figure (NFmin) of 1.1 dB and an associated gain (Gass) of 12 dB. To our knowledge, these results are the best ft, fmax and microwave noise performance ever reported on GaN HEMT grown on Silicon substrate.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 4 )

Date of Publication:

April 2004

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