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K-band low-noise amplifiers using 0.18 μm CMOS technology

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5 Author(s)
Kyung-Wan Yu ; Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA ; Yin-Lung LU ; Da-Chiang Chang ; Liang, V.
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Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:14 ,  Issue: 3 )

Date of Publication:

March 2004

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