Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)

In this paper, we present a nanometer-sized floating-gate memory device, fabricated on silicon-on-insulator substrate and using silicon nanocrystals as storage nodes. Single electron charging and discharging phenomena occurring at room temperature will be demonstrated and discussed by means of simple analytical models. A deeper investigation of the impact of critical dimensions of the memory cell (i.e., active area and channel width and length) on the device operation (in particular, memory programming window), performed on a large number of samples, will be reported. Qualitative explanations for the observed experimental behaviors will be given.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:3 ,  Issue: 1 )