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Circuit technologies for an embedded 3.3 V 2 Mb low power SIBE flash memory

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5 Author(s)
Liyang Pan ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Zhigang Duan ; Dong Wu ; Jun Zhu
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In this paper, an embedded 3.3 V 2 Mb SIBE-based flash memory is introduced. Some novel circuit technologies, such as the DINOR memory array architecture, the row decoder with high performance negative voltage switch and the sector decoder, are described in detail. By introducing a negative logic level circuit in the sector decoder, the maximum high voltage stress is reduced to 8 V. The simulated and tested results show that the SIBE-based Flash memory has low program power, high access speed and high performance.

Published in:

ASIC, 2003. Proceedings. 5th International Conference on  (Volume:1 )

Date of Conference:

21-24 Oct. 2003