Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Influence of metal layer thickness of spiral inductors on the quality factor by 3-D EM simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lin Shiwei ; Inst. of Microelectron., Singapore, Singapore ; Guo Lihui

The influence of the inductor thickness on the Q factor has been analyzed in detail by the 3-D electromagnetic simulator HFSS. For spiral inductors based on the CMOS compatible Cu/SiO2 interconnect technology, the improvement of the Q factor can be realized by increasing the metal layer thickness due to the decrease of the series resistance. However, such improvement of the Q factor becomes slender as the thickness over a certain value because of the skin effect and proximity effect. Considering both the effectiveness of improving Q by increasing the thickness and the process challenge to state-of-the-art CMOS technology, we recommend that the reasonable thickness of the interconnect top-metal-layer for inductors can be set to be from 4 μm to 6μm.

Published in:

ASIC, 2003. Proceedings. 5th International Conference on  (Volume:2 )

Date of Conference:

21-24 Oct. 2003