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A novel application of SOI gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. This application allows the power transistor to give higher intrinsic gain, lower power consumption, boost driving current capability and increase breakdown voltage. The results show that the good performance of this novel application can be used in the design of RF transmitter.
ASIC, 2003. Proceedings. 5th International Conference on (Volume:2 )
Date of Conference: 21-24 Oct. 2003