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Nano-patterning by laser interference lithography

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4 Author(s)
Q. Xie ; Laser Microprocessing Lab., Data Storage Inst., Singapore, Singapore ; M. H. Hong ; L. H. Van ; T. C. Chong

In this paper, argon ion laser of 514.5 nm, is used for interference lithography. Two mutually coherent laser beams intersect at the surface of a coated substrate, creating a sinusoidal intensity profile. This is then transferred into the holographic film, creating a line and space pattern with spatial period, Λ = λ/2sinθ, where θ = 40 ° thus, Λ = 400 nm.

Published in:

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on  (Volume:2 )

Date of Conference:

15-19 Dec. 2003