Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy

We demonstrate ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 and 1.4 /spl mu/m grown by molecular beam epitaxy using radio frequency plasma nitrogen source. Threshold current density of 0.57 and 3.87 KA/cm/sup 2/ at /spl lambda/=1.3 and 1.4 /spl mu/m, respectively, were obtained for the lasers with a 3-/spl mu/m ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 and 0.37 W/A were obtained for /spl lambda/=1.3 and 1.4 /spl mu/m emission, respectively, with cavity length L=1 mm. The cw kink-free output power of wavelength 1.3 /spl mu/m single lateral mode laser is more than 150 mW, and the maximum total wallplug efficiency of 29% was obtained.