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Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy

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10 Author(s)
Wang, J.S. ; Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Kovsh, A.R. ; Hsiao, R.S. ; Lin, G.
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We demonstrate ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 and 1.4 μm grown by molecular beam epitaxy using radio frequency plasma nitrogen source. Threshold current density of 0.57 and 3.87 KA/cm2 at λ=1.3 and 1.4 μm, respectively, were obtained for the lasers with a 3-μm ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 and 0.37 W/A were obtained for λ=1.3 and 1.4 μm emission, respectively, with cavity length L=1 mm. The cw kink-free output power of wavelength 1.3 μm single lateral mode laser is more than 150 mW, and the maximum total wallplug efficiency of 29% was obtained.

Published in:

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on  (Volume:2 )

Date of Conference:

15-19 Dec. 2003