By Topic

A simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Seonghearn Lee ; Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-Do, South Korea

A new and direct method is proposed to determine intrinsic (Cμ) and extrinsic (Cμx) base-collector junction capacitances of bipolar junction transistors (BJTs). The voltage dependent curves of Cμ and Cμx are obtained by using a new Y-parameter equation that is derived from a simplified "cut-off mode" equivalent circuit including ac current crowding capacitance. This new method is superior to several conventional ones, because it remains valid when there is ac emitter current crowding. The superiority of the new method has been verified by observing much better agreement of modeled gain with measured ones than the conventional method.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 4 )