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A novel MONOS-type nonvolatile memory using high-κ dielectrics for improved data retention and programming speed

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4 Author(s)
Xuguang Wang ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Jun Liu ; Weiping Bai ; Dim-Lee Kwong

This paper presents a novel metal-oxide-nitride-oxide-silicon (MONOS)-type nonvolatile memory structure using hafnium oxide (HfO2) as tunneling and blocking layer and tantalum pentoxide (Ta2O5) as the charge trapping layer. The superiorities of such devices to traditional SiO2-Si3N4-SiO2 stack devices in obtaining a better tradeoff between faster programming and better retention are illustrated based on a band engineering analysis. The experimental results demonstrate that the fabricated devices can be programmed as fast as 1 μs and erased from 10 ns at an 8-V gate bias. The retention decay rate of this device is improved by a factor more than three as compared to the conventional MONOS/SONOS type devices. Excellent endurance and read disturb performance are also demonstrated.

Published in:

IEEE Transactions on Electron Devices  (Volume:51 ,  Issue: 4 )