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This paper describes ST new BiCMOS RF technology based on a mature 0.25μm CMOS process. Two SiGe:C HBTs are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.
Date of Conference: 28-30 Sept. 2003