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A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

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8 Author(s)

In this paper, we present a 10/30GHz tripler and an X band VCO, integrated on a single chip, using a 0.35μm, 60GHz-FMAX BiCMOS SiGe technology. These two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm2 (probe pads area excluded).

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

Date of Conference:

28-30 Sept. 2003