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The intrinsic dielectric properties of Al2O3 have been investigated with respect to MIMCAP applications and compared to SiO2, SiN and Ta2O5. Al2O3 may be scaled down to 20nm (3.5fF/μm2) while still meeting the reliability requirements and thus surpassing SiN and SiO2 considerably. C(V) dependence (about 100ppm/V2 @ 50nm for the quadratic voltage coefficient) and dielectric loss (tanδ=0.0024) meet the requirements for analog and RF applications. Compared to Ta2O5, Al2O3 has much lower leakage, but a slight disadvantage in achievable specific capacitance.