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Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator

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4 Author(s)
Guyonnet, M. ; Motorola Semi-conducteurs, Toulouse, France ; Sommet, R. ; Quere, R. ; Bouisse, Gerard

In this article, we introduce a new approach for electro thermal modelling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D bi-cubic splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D electro thermal model is used with the ADS circuit simulator.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

Date of Conference:

28-30 Sept. 2003

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