By Topic

Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Joshi, A.B. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Lo, G.O. ; Shih, D.K. ; Dim-Lee Kwong

The authors report a systematic study of the impact of post-nitridation rapid thermal anneals in oxygen and nitrogen on the electrical properties of MOS devices with thin gate oxides. A comparative study of the two annealing ambients has led to the formulation of qualitative models to describe the charge trapping properties of the respective gate dielectrics. Roles of the post-nitridation anneals in altering the radiation and hot-electron sensitivity of the MOS devices are investigated and explained on the basis of structural changes in the gate oxides during nitridation and subsequent annealing. The performance and reliability of MOSFETs with reoxidized nitrided gate oxides are investigated. Overall, the results indicate that reoxidized nitrided oxides show improved charge trapping properties, better resistance to radiation and hot-carrier stress, and improved high-field electron mobility in MOSFETs

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 4 )