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Theory and design methodology for an optimum single-phase CCD

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2 Author(s)
C. R. Smith ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; S. G. Chamberlain

The authors present a theory, a design methodology, and a transient simulator for a silicon single-phase CCD. The time-varying distribution of the surface hole charge is derived and an expression for maximum bias transition rate is established. The new design methodology to maximize signal capacity through nonlinear optimization is presented. The optimizer utilizes one-dimensional device models which have been corrected for small-geometry effects. The effect of parameter variation on signal capacity is assessed. A transient simulator for signal transfer is presented which accurately models fringing fields and thermal diffusion. Signal transfer speed variations with device design and geometry are discussed

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 4 )