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Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)

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1 Author(s)
Oxley, C.H. ; De Montfort Univ., Leicester, UK

To accurately model distortion effects using a large signal model the variation of all the elements of the equivalent circuit model under bias conditions are required. A technique is presented to extract the source resistance Rs under bias conditions for the aluminium gallium nitride/gallium nitride (AlGaN/GaN) HEMT. The source resistance Rs is found to decrease as Vgs is increased, implying that the conduction channel becomes wider, which indicates a parallel conduction path to the 2D electron-gas.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 5 )