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Hot small-signal S-parameter measurements of power transistors operating under large-signal conditions in a load-pull environment for the study of nonlinear parametric interactions

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7 Author(s)
Gasseling, T. ; Inst. de Recherche en Commun. Opt.s et Microondes, Univ. of Limoges, France ; Barataud, D. ; Mons, S. ; Nebus, J.-M.
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This paper presents a setup that enables wide-band (in-band and out-of-band) measurements of hot small-signal S-parameters of nonlinear devices driven by a large-signal single tone (namely, the pump signal). A load-pull characterization is performed at the pump frequency (F0), while hot small-signal S-parameters are measured with a perturbating signal at a frequency (f) by the use of a probe tone. Basically, the frequency of the probe tone is swept over a wide bandwidth (at the present time from 300 MHz up to F0/2). A higher frequency range, from near dc to KF0, will be implemented in a similar manner. The measurement setup reported here is applied to on-wafer measurements of S-band HBTs. Hot small-signal S-parameter measurements versus large-signal load impedance and pump level will be shown. An application to the prediction of parametric oscillations will be demonstrated. A parametric oscillation predicted at 373 MHz is confirmed by spectrum measurements.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:52 ,  Issue: 3 )