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This short paper concerns the measurement of IC susceptibility to radiated electromagnetic interference by means of a TEM cell. In particular, it points out the main weaknesses of such a method on the basis of theoretical analysis and experimental tests. The analytical expression of the radio frequency (RF) voltage induced on each IC package lead by the transverse electromagnetic field inside a TEM cell is derived. Then, it is pointed out that the amplitude of the RF interference (RFI), which is induced between two generic IC leads, depends on their position with respect to the direction of the electromagnetic field propagation within the TEM cell. Finally, the theoretical results are supported with experimental ones, which have been obtained by using a specific test chip.